IXFT24N90P

IXYS
747-IXFT24N90P
IXFT24N90P

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PolarHV HiPerFETs 500V-1.2Kv Red Rds

Modelo ECAD:
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En existencias: 326

Existencias:
326 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
37 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
₡-
Precio ext.:
₡-
Est. Tarifa:

Precio (CRC)

Cantidad Precio unitario
Precio ext.
₡10 481 ₡10 481
₡6 519 ₡65 190
₡5 754 ₡690 480
₡5 748 ₡5 862 960
5 010 Presupuesto

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
SMD/SMT
D3PAK-3 (TO-268-3)
N-Channel
1 Channel
900 V
24 A
420 mOhms
- 30 V, 30 V
6.5 V
130 nC
- 55 C
+ 150 C
660 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
Tiempo de caída: 38 ns
Transconductancia hacia delante - Mín.: 16 S
Tipo de producto: MOSFETs
Tiempo de subida: 40 ns
Serie: IXFT24N90
Cantidad de empaque de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 68 ns
Tiempo típico de demora de encendido: 46 ns
Peso de la unidad: 4,500 g
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Polar HiPerFET Power MOSFETs

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