FF900R12ME7WB11BPSA1

Infineon Technologies
726-FF900R12ME7WB11B
FF900R12ME7WB11BPSA1

Fabricante:

Descripción:
Módulos IGBT 1200 V, 900 A dual IGBT module

Modelo ECAD:
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En existencias: 6

Existencias:
6 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
14 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
₡-
Precio ext.:
₡-
Est. Tarifa:

Precio (CRC)

Cantidad Precio unitario
Precio ext.
₡120 901 ₡120 901
₡120 878 ₡1 450 536
102 Presupuesto

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Módulos IGBT
IGBT Silicon Modules
Dual
1.2 kV
1.5 V
890 A
100 nA
- 40 C
+ 175 C
Tray
Marca: Infineon Technologies
Tipo de producto: IGBT Modules
Cantidad de empaque de fábrica: 6
Subcategoría: IGBTs
Tecnología: Si
Nombre comercial: EconoDUAL
Alias de las piezas n.º: FF900R12ME7W_B11 SP005589481
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8504409100
USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

1200V Dual IGBT Modules

Infineon 1200V, Dual IGBT Modules, are EconoDUAL™ 3 1200V, 900A dual TRENCHSTOP™ IGBT7 Modules with emitter-controlled 7 diodes, NTC, and PressFIT contact technology. The IGBT Modules offer a higher inverter output current for the same frame size and avoidance of paralleling. The Infineon 1200V, Dual IGBT Modules, provide an easy and reliable assembly with high inter-connection reliability.

IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.