TK100A10N1
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Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) High Speed, Low-Voltage N-CH MOSFET 100V
Disponibilidad
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Existencias:
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Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
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Test/Quality Data
- TARIC:
- 8541290000
Costa Rica
