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DMN53D0LQ-7

Name: Diodes Incorporated DMN53D0LQ-7
Brand: Diodes Incorporated
SKU: 621-DMN53D0LQ-7
Price: 168 CRC
Availability: InStock

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Mouser N.º:

621-DMN53D0LQ-7

Fabricante N.º:

DMN53D0LQ-7

Fabricante:

Diodes Incorporated

Descripción:

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch. 50V 500mA AEC-Q101

Hoja de datos:

DMN53D0LQ-7 Hoja de datos (PDF)

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En existencias: 13 437

Existencias:: 13 437

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En pedido:: 9 000

Se espera el 17/6/2026
Plazo de entrega de fábrica:: 24

Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

₡-

Precio ext.:

₡-

Est. Tarifa:

Empaque:

Envase tipo carrete completo (pedir en múltiplos de 3000)

Cinta cortada

MouseReel™ (+₡4 100)

Precio (CRC)

Cantidad	Precio unitario	Precio ext.
Cinta cortada / MouseReel™ ^†
	₡168	₡168
	₡104	₡1 040
	₡65,5	₡6 550
	₡48,1	₡24 050
	₡42,9	₡42 900
Envase tipo carrete completo (pedir en múltiplos de 3000)
	₡34,2	₡102 600
	₡30,2	₡181 200
	₡25,5	₡229 500
	₡24,4	₡585 600

† ₡4 100 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver. ↩

Embalaje alternativo

N.º de artículo del Fabricante:

DMN53D0LQ-13

Embalaje:

Reel, Cut Tape, MouseReel

Disponibilidad:

En existencias

Precio:

₡168

Mín.:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Atributo del producto	Valor de atributo	Seleccionar atributo
Fabricante:	Diodes Incorporated
Categoría de producto:	Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:
Tecnología:	Si
Estilo de montaje:	SMD/SMT
Paquete / Cubierta:	SOT-23-3
Polaridad del transistor:	N-Channel
Número de canales:	1 Channel
Vds - Tensión disruptiva entre drenaje y fuente:	50 V
Id - Corriente de drenaje continua:	500 mA
Rds On - Resistencia entre drenaje y fuente:	1.6 Ohms
Vgs - Tensión entre puerta y fuente:	- 20 V, 20 V
Vgs th - Tensión umbral entre puerta y fuente:	800 mV
Qg - Carga de puerta:	600 pC
Temperatura de trabajo mínima:	- 55 C
Temperatura de trabajo máxima:	+ 150 C
Dp - Disipación de potencia :	540 mW
Modo canal:	Enhancement
Calificación:	AEC-Q101
Empaquetado:	Reel
Empaquetado:	Cut Tape
Empaquetado:	MouseReel
Marca:	Diodes Incorporated
Configuración:	Single
Tiempo de caída:	11 ns
Tipo de producto:	MOSFETs
Tiempo de subida:	2.5 ns
Serie:	DMN53
Cantidad de empaque de fábrica:	3000
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo de retardo de apagado típico:	19 ns
Tiempo típico de demora de encendido:	2.7 ns
Peso de la unidad:	8 mg

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Atributos seleccionados: 0

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Hoja de datos

DMN53D0LQ-7 Hoja de datos (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Adaptive LED Lighting Applications

Diodes Inc. Adaptive LED Lighting Applications are in high demand for vehicle lighting, including ambient mood lighting, illuminated sill plates, and puddle lighting, as relatively recent additions. Elegant lighting design, where effects like dimming and fade-in/fade-out are required, needs a dimmable device. The Diodes Inc. LED Drivers with switching regulators allow maximum overall efficiency with the highest degree of control and accuracy. Simple LED lighting solutions can be implemented with a series resistor. However, this has numerous disadvantages in an automotive environment. The LED output will vary with voltage during stop/start events, and VF-matched LEDs may be required for visual matching. LED lifetimes may be reduced due to uncontrolled current spikes. LED Drivers conquer these issues cost-effectively, with a small footprint.

Automotive Applications

Diodes Inc. Automotive Parts have a wide portfolio of automotive-compliant analog, discrete, and timing products. Diodes Inc. Automotive Parts offers various solutions for various automotive applications, including BLDC, Adaptive LED Lighting, and Connected Driving.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Connected Driving Applications

Diodes Inc. Connected Driving Applications address issues such as finding a parking space, adaptive navigation through busy streets, or using technology to avoid congestion on major roads between cities, along with increasing driver and pedestrian safety. The ultimate objective is a fully autonomous car, which can only be enabled through high-speed data communications. Vehicle-to-Everything (V2X) communications include Vehicle-to-Car, Pedestrian, Device, and Grid fuelled by increased ADAS functionality. The volume of data generated, transferred, and processed within the car is increasing exponentially. Reliable high-speed data communications will be a part of every vehicle’s infrastructure. Diodes Inc. offers products to realize the vision of a fully autonomous, connected vehicle.

Automotive Brushless DC (BLDC) Motor Applications

Diodes Incorporated Automotive Brushless DC (BLDC) Motors offer improved performance, longer lifetime, reduced noise, and greater ease of use when compared to equivalent mechanical solutions. MOSFETs within the BLDC Motor Systems are typically configured in a three-phase bridge arrangement to drive the DC motor. The MOSFETs must be capable of handling start-up and stalled motor currents of up to six times the continuous current rating of the motor. The Diodes Incorporated BLDC Motors are extensively used in automotive applications such as fuel pumps, water pumps, and Anti-Lock Braking Systems (ABS), and provide additional torque for power steering systems.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.