HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Datasheet
7 904In Stock
₡1 696,72
₡848,36
₡765,08
₡619,35
₡567,31
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGP30H60DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Datasheet
869In Stock
1 000Expected 3/12/2027
Cut Tape
₡1 956,95
₡1 275,14
₡895,20
₡749,47
Reel
₡650,58
MouseReel Available
Min.: 1
Mult.: 1
: 1 000
Si D2PAK-3 SMD/SMT Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGB30H60DFB Reel, Cut Tape, MouseReel