650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Resultados: 10
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Descripción Hoja de datos Disponibilidad Precio: (CRC) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Tecnología
Paquete / Cubierta
Estilo de montaje
Configuración
Máx. voltaje VCEO colector-emisor
Voltaje de saturación colector-emisor
Máximo voltaje puerta-emisor
Colector de Corriente Continua a 25 C
Dp - Disipación de potencia
Temperatura de trabajo mínima
Temperatura de trabajo máxima
Serie
Calificación
Empaquetado
STMicroelectronics IGBTs Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT
Hoja de datos
490En existencias
600Se espera el 30/7/2027
Min.: 1
Mult.: 1

Tube
STMicroelectronics IGBTs Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT
Hoja de datos
545En existencias
Min.: 1
Mult.: 1

Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo
Hoja de datos
983En existencias
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 100 A 300 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
Hoja de datos
594En existencias
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
Hoja de datos
590En existencias
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
Hoja de datos
14En existencias
Min.: 1
Mult.: 1

- 20 V, 20 V HB2 AEC-Q100 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
Hoja de datos
42En existencias
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.55 V - 20 V, 20 V 145 A 441 W - 55 C + 150 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
Hoja de datos
493En existencias
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
Hoja de datos
Plazo de entrega 14 Semanas
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 80 A 238 W - 55 C + 175 C STGWA40IH65DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead
Hoja de datos
Plazo de entrega no en existencias 14 Semanas
Min.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C HB2 Tube