Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Types of Semiconductors

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Results: 51
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS
ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL 107In Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 149In Stock
2 500Expected 9/7/2026
Min.: 1
Mult.: 1
: 2 500

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
471Expected 8/28/2026
Min.: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS
551Expected 1/20/2027
Min.: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
480Expected 8/18/2026
Min.: 1
Mult.: 1

ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
956On Order
Min.: 1
Mult.: 1

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
200Expected 3/19/2027
Min.: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 2 500

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp Non-Stocked
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 480
Mult.: 480

ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,70ns,2.5v-3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WV1M16EBLL-55BLI
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 480
Mult.: 480

ISSI IS66WV1M16EBLL-55BLI-TR
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE2M16TCLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE2M16TCLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 480
Mult.: 480

ISSI IS66WVE2M16ECLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE4M16ECLL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE4M16EALL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVC2M16EALL-7010BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500
ISSI IS66WVC2M16EALL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 480
Mult.: 480