|
|
SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
₡11 356,56
-
736In Stock
-
NRND
|
Mouser Part #
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SIC_DISCRETE
|
|
736In Stock
|
|
|
₡11 356,56
|
|
|
₡8 452,36
|
|
|
₡8 379,49
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
₡2 779,29
-
6 783In Stock
-
4 000Expected 1/7/2027
|
Mouser Part #
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
6 783In Stock
4 000Expected 1/7/2027
|
|
|
₡2 779,29
|
|
|
₡1 847,65
|
|
|
₡1 316,78
|
|
|
₡1 165,84
|
|
|
₡1 087,77
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
₡3 830,63
-
285In Stock
-
NRND
|
Mouser Part #
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
285In Stock
|
|
|
₡3 830,63
|
|
|
₡2 430,57
|
|
|
₡2 040,22
|
|
|
₡1 889,29
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
₡7 869,44
-
1 221In Stock
-
NRND
|
Mouser Part #
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
1 221In Stock
|
|
|
₡7 869,44
|
|
|
₡4 949,63
|
|
|
₡4 460,39
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
₡5 725,12
-
42In Stock
-
240Expected 8/24/2026
-
NRND
|
Mouser Part #
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
42In Stock
240Expected 8/24/2026
|
|
|
₡5 725,12
|
|
|
₡3 601,62
|
|
|
₡3 200,86
|
|
|
₡2 919,81
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
₡8 369,08
-
2 160On Order
-
NRND
|
Mouser Part #
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160On Order
Factory Lead-Time:
52 Weeks
|
|
|
₡8 369,08
|
|
|
₡5 428,45
|
|
|
₡4 975,65
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
₡4 731,03
-
Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part #
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
|
₡4 731,03
|
|
|
₡2 763,67
|
|
|
₡2 331,68
|
|
|
₡2 211,98
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Costa Rica