Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 590In Stock
1 000On Order
Cut Tape
₡20 110,78
₡16 410,27
₡14 500,17
₡14 416,89
Reel
₡13 537,31
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 2 011In Stock
Cut Tape
₡14 458,53
₡9 987,73
₡9 961,71
₡9 415,22
Reel
₡8 785,46
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 245In Stock
Cut Tape
₡9 269,49
₡7 062,72
₡5 886,46
₡5 246,29
Reel
₡4 897,58
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 603In Stock
Cut Tape
₡7 041,90
₡4 299,04
₡4 215,77
Reel
₡4 012,79
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 502In Stock
1 000Expected 5/6/2027
Cut Tape
₡4 881,97
₡3 336,18
₡2 748,06
₡2 451,39
Reel
₡2 295,25
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3 615In Stock
Cut Tape
₡2 742,85
₡1 426,08
₡1 295,96
₡1 145,02
Reel
₡1 139,82
Min.: 1
Mult.: 1
Max.: 1 000
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 79In Stock
1 000Expected 12/31/2026
Cut Tape
₡5 938,51
₡4 200,16
₡3 497,53
₡3 117,59
Reel
₡2 914,61
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 39In Stock
2 000Expected 7/8/2027
Cut Tape
₡4 273,02
₡3 008,29
₡2 435,78
₡2 165,14
Reel
₡1 915,31
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 198In Stock
4 000On Order
Cut Tape
₡3 362,21
₡2 201,57
₡1 623,85
₡1 441,69
Reel
₡1 275,14
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
1 999Expected 11/19/2026
Cut Tape
₡10 575,86
₡7 900,66
₡6 833,71
₡6 469,38
Reel
₡6 042,60
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
2 000Expected 12/3/2026
Cut Tape
₡3 716,12
₡2 487,82
₡1 998,59
₡1 774,79
Reel
₡1 571,81
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement