|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
₡20 110,78
-
1 590In Stock
-
1 000On Order
|
Mouser Part #
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 590In Stock
1 000On Order
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
₡14 458,53
-
2 011In Stock
|
Mouser Part #
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2 011In Stock
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
₡9 269,49
-
245In Stock
|
Mouser Part #
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
245In Stock
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
₡7 041,90
-
1 603In Stock
|
Mouser Part #
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 603In Stock
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
₡4 881,97
-
502In Stock
-
1 000Expected 5/6/2027
|
Mouser Part #
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
502In Stock
1 000Expected 5/6/2027
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
₡2 742,85
-
3 615In Stock
|
Mouser Part #
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 615In Stock
|
|
Min.: 1
Mult.: 1
Max.: 1 000
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
₡5 938,51
-
79In Stock
-
1 000Expected 12/31/2026
|
Mouser Part #
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
79In Stock
1 000Expected 12/31/2026
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
₡4 273,02
-
39In Stock
-
2 000Expected 7/8/2027
|
Mouser Part #
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
39In Stock
2 000Expected 7/8/2027
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
₡3 362,21
-
198In Stock
-
4 000On Order
|
Mouser Part #
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
198In Stock
4 000On Order
On Order:
2 000 Expected 5/13/2027
2 000 Expected 8/12/2027
Factory Lead-Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
₡10 575,86
-
1 999Expected 11/19/2026
|
Mouser Part #
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 999Expected 11/19/2026
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
₡3 716,12
-
2 000Expected 12/3/2026
|
Mouser Part #
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2 000Expected 12/3/2026
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|