TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Maximum Operating Temperature Vr - Reverse Voltage Packaging
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY 2 550In Stock
₡6 807,69
₡3 851,44
₡3 565,19
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 5A RDL SIC SKY 1 257In Stock
₡3 690,10
₡1 967,36
₡1 800,81
₡1 587,42
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen 6 315In Stock
₡4 158,52
₡2 264,02
₡2 076,66
₡1 884,08
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 20A RDL SIC SKY 891In Stock
₡8 223,35
₡4 746,64
₡4 559,28
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1 674In Stock
₡3 117,59
₡1 639,47
₡1 493,74
₡1 254,32
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 755In Stock
₡3 429,87
₡1 816,42
₡1 660,28
₡1 441,69
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY 455In Stock
₡5 282,72
₡2 914,61
₡2 690,81
₡2 555,49
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 650V 12A SM SIC SKY Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C 650 V Tube