NV6428 Bi-Directional GaNFast™ Power Switches

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches are designed to block voltage in both directions. A monolithic, integrated substrate-clamping circuit between each source and the common substrate automatically clamps the source-to-substrate voltage. Navitas’ unique substrate clamp technology delivers optimized switching performance during 4-quadrant operation compared to a floating-substrate switch, which can experience a "back-gating effect".

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT 350In Stock
450Expected 1/13/2027
Cut Tape
₡8 473,18
₡6 370,50
₡4 751,85
Reel
₡4 751,85
Min.: 1
Mult.: 1
: 450
SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT Non-Stocked Lead-Time 26 Weeks
Cut Tape
₡9 154,99
₡6 974,24
₡5 808,39
₡5 178,63
₡4 397,93
Reel
₡4 397,93
Min.: 1
Mult.: 1
: 1 500
SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C