Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 268In Stock
₡4 777,87
₡2 815,72
₡2 373,32
₡2 300,46
₡2 165,14
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 250In Stock
₡5 194,24
₡3 549,57
₡2 930,22
₡2 623,15
₡2 467,01
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 284In Stock
720On Order
₡5 688,69
₡3 096,77
₡2 867,76
₡2 852,15
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 41In Stock
500Expected 12/10/2026
₡4 220,97
₡2 279,64
₡2 092,27
₡1 920,52
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 90In Stock
₡6 198,74
₡4 226,18
₡4 116,88
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 151In Stock
₡7 838,21
₡4 413,55
₡4 335,48
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube