Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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Results: 43
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Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity.
Qty. RoHS Product Type
Technology
Mounting Style
Package / Case
Transistor Polarity
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
Datasheet
1 200Expected 3/12/2027
MouseReel Available
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
Datasheet
1 985On Order
MouseReel Available
Min.: 1
Mult.: 1
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Datasheet
1 997Expected 2/26/2027
Min.: 1
Mult.: 1
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
Datasheet
998Expected 1/29/2027
Min.: 1
Mult.: 1
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datasheet
400Expected 2/5/2027
Min.: 1
Mult.: 1
: 600

SiC MOSFETS


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
Datasheet
996Expected 8/31/2026
Min.: 1
Mult.: 1
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
Datasheet
1 200Expected 1/29/2027
MouseReel Available
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
Datasheet
592Expected 8/20/2027
MouseReel Available
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SMD/SMT H2PAK-2 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
1 800Expected 1/29/2027
MouseReel Available
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
Datasheet
599Expected 9/28/2026
Min.: 1
Mult.: 1
: 600

SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Datasheet
600Expected 5/21/2027
Min.: 1
Mult.: 1

SiC MOSFETS Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Datasheet
1 945On Order
Min.: 1
Mult.: 1

SiC MOSFETS Through Hole N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
Datasheet
100On Order
Min.: 1
Mult.: 1

SiC MOSFETS Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1
Mult.: 1
: 1 000

SiC MOSFETS
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

SiC MOSFETS Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1
Mult.: 1

SiC MOSFETS
STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

SiC MOSFETS