Memory & Data Storage

Types of Memory & Data Storage

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Results: 531
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS
GSI Technology SRAM 2.5 or 3.3V 1M x 32 32M Non-Stocked
Min.: 18
Mult.: 18
No
GSI Technology SRAM 1.8/2.5V 1M x 36 32M Non-Stocked
Min.: 18
Mult.: 18
No
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M Non-Stocked
Min.: 1
Mult.: 1
No
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M Non-Stocked
Min.: 18
Mult.: 18
No
GSI Technology SRAM 2.5 or 3.3V 1M x 32 32M Non-Stocked
Min.: 1
Mult.: 1
No
GSI Technology SRAM 1.8/2.5V 1M x 36 36M Non-Stocked
Min.: 1
Mult.: 1
No
GSI Technology SRAM 1.8/2.5V 1M x 32 32M Non-Stocked
Min.: 18
Mult.: 18
No
GSI Technology SRAM 1.8/2.5V 1M x 36 32M Non-Stocked
Min.: 18
Mult.: 18
No
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M Non-Stocked
Min.: 1
Mult.: 1
No
GSI Technology SRAM 2.5 or 3.3V 1M x 32 32M Non-Stocked
Min.: 1
Mult.: 1
No
Renesas / Dialog AT25SL0321C-SUE-T
Renesas / Dialog NOR Flash 32 Mbit, 1.8V (1.65V to 1.95V), -40 C to 85 C, SOIC-W 208mil (Tape & Reel), Single, Dual, Quad SPI NOR flash Non-Stocked Lead-Time 26 Weeks
Min.: 6 000
Mult.: 2 000
: 2 000

Renesas / Dialog AT25QL0321C-MUE-T
Renesas / Dialog NOR Flash 32 Mbit, 1.8V (1.65V to 1.95V), -40 C to 85 C, DFN 5x6 (Tape & Reel), Quad enabled (Single, Dual, Quad) SPI NOR flash Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

Renesas / Dialog AT25SL0321C-MUE-T
Renesas / Dialog NOR Flash 32 Mbit, 1.8V (1.65V to 1.95V), -40 C to 85 C, DFN 5x6 (Tape & Reel), Single, Dual, Quad SPI NOR flash Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

Renesas / Dialog AT25SL0321C-SSUE-T
Renesas / Dialog NOR Flash 32 Mbit, 1.8V (1.65V to 1.95V), -40 C to 85 C, SOIC-N 150mil (Tape & Reel), Single, Dual, Quad SPI NOR flash Non-Stocked Lead-Time 26 Weeks
Min.: 8 000
Mult.: 4 000
: 4 000


ISSI SRAM 512K,High-Speed/Low Power,Async,32K x 16,12ns,3.3v,44 Pin TSOP II, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000


ISSI SRAM 512K,High-Speed/Low Power,Async,32K x 16,12ns,2.4v-3.6v,44 Pin TSOP II, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA(10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 52 Weeks
Min.: 136
Mult.: 136

ISSI DRAM 4G, 1.2/1.8V, LPDDR2, 128Mx32, 400MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT Non-Stocked Lead-Time 52 Weeks
Min.: 171
Mult.: 171

ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R Non-Stocked Lead-Time 52 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz at CL2 , 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 52 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz at CL2 , 86 pin TSOP II, RoHS Non-Stocked Lead-Time 52 Weeks
Min.: 108
Mult.: 108

ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 52 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI DRAM LPDDR2,512M,RoHs 400MHz,16Mx32,IT Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

ISSI DRAM 512M, 1.8V, Mobile DDR, 16Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R Non-Stocked Lead-Time 52 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500