100V to 150V StrongIRFET™ Power MOSFETs

Infineon Technologies 100V to 150V StrongIRFET™ Power MOSFETs are optimized for low on-resistance (RDS(on)) and high current capability. These devices offer an RDS(on) as low as 1.3mΩ at 100V and a current handling capability as high as 209A at 100V. These features result in reduced conduction losses and increased power density while still accommodating legacy designs. The StrongIRFET Power MOSFETs are ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications, including DC motors, battery management systems, inverters, and DC-DC converters.  

Results: 11
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 Mfr.
Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
Infineon Technologies MOSFETs IFX FET >80 - 100V
Datasheet
4 798In Stock
400On Order
₡3 913,90
₡2 102,68
₡1 925,72
₡1 733,15
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 203 A 1.7 mOhms 20 V 3.8 V 168 nC - 55 C + 175 C 341 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
1 931In Stock
₡4 595,71
₡2 586,71
₡2 206,77
₡2 081,86
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 186 A 4.5 mOhms 20 V 4.6 V 80 nC - 55 C + 175 C 341 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V
Datasheet
14 090In Stock
₡5 157,81
₡3 138,41
₡2 862,56
₡2 633,55
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 209 A 1.28 mOhms 20 V 3.8 V 330 nC - 55 C + 175 C 556 W Enhancement Tube

Infineon Technologies MOSFETs MOSFET_(120V 300V)
Datasheet
674In Stock
₡10 159,48
₡7 036,69
₡5 865,65
₡5 366,00
₡4 949,63
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 4.8 mOhms 30 V 3 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube


Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
1 531In Stock
1 200Expected 12/31/2026
₡5 829,21
₡3 252,91
₡3 003,09
₡2 945,83
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 150 V 203 A 2.7 mOhms 20 V 4.6 V 160 nC - 55 C + 175 C 556 W Enhancement Tube


Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
2 278In Stock
3 600On Order
₡4 392,73
₡3 091,56
₡2 503,44
₡2 217,18
View
Min.: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms 20 V 3 V 151 nC - 55 C + 175 C 517 W Enhancement Tube


Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
6 887In Stock
800Expected 10/29/2026
₡3 336,18
₡2 185,95
₡1 613,44
₡1 426,08
View
Min.: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 180 A 4.5 mOhms 20 V 2 V 150 nC - 55 C + 175 C 370 W Enhancement Tube
Infineon Technologies IRFP4310ZPBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
759In Stock
800Expected 10/21/2026
₡2 269,23
₡1 488,53
₡1 108,59
₡926,43
View
Min.: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 120 A 6 mOhms 20 V 4 V 120 nC - 55 C + 175 C 280 W Enhancement Tube
Infineon Technologies IRFP4468PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
2 700In Stock
₡4 413,55
₡2 409,75
₡2 217,18
₡1 967,36
Min.: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 290 A 2.6 mOhms 20 V 2 V 360 nC - 55 C + 175 C 520 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 100V 51A 25mOhm 66.7nCAC
Datasheet
33 408On Order
₡2 092,27
₡1 155,43
₡988,88
₡853,56
View
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 51 A 25 mOhms 20 V 1.8 V 66.7 nC - 55 C + 175 C 180 W Enhancement Tube

Infineon Technologies MOSFETs MOSFET_(120V 300V)
Datasheet
Non-Stocked Lead-Time 4 Weeks
₡7 047,10
₡5 256,70
₡4 158,52
₡4 033,61
₡3 908,70
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms 30 V 5 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube