Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Results: 49
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Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Renesas Electronics GaN FETs 700V, 240mohm GaN FET in DPAK
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

SMD/SMT TO-252-3L N-Channel 1 Channel 700 V 8 A 312 mOhms 20 V 2.5 V 5.4 ns - 55 C + 150 C 31.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

SMD/SMT PQFN-3 N-Channel 1 Channel 700 V 8 A 312 mOhms 20 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W Enhancement SuperGan
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in DPAK
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

SMD/SMT TO-252-3L N-Channel 1 Channel 700 V 5 A 560 mOhms 20 V 2.5 V 5.2 nC - 55 C + 150 C 25 W Enhanecement SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 14.2 A 180 mOhms 20 V 2 V 14 nC - 55 C + 150 C 62.5 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 8 A 312 mOhms 20 V 2 V 12.7 nC - 55 C + 150 C 31.5 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 85mohm GaN FET in TOLL Non-Stocked Lead-Time 18 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

650 V SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 16 A 180 mOhms 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in TO220
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN
Renesas Electronics TP65H065G4PLSGB-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in 8x8 PQFN IP Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

650 V SuperGaN
Renesas Electronics TP65H070G4LSGBA-TR
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

650 V SuperGaN
Renesas Electronics TP65H030G4PYS
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-4L Non-Stocked Lead-Time 18 Weeks
Min.: 960
Mult.: 240

TO-247-4L 650 V SuperGaN
Renesas Electronics TP65H050G4PQS-TR
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Non-Stocked Lead-Time 18 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

650 V SuperGaN
Renesas Electronics TP65H050G4PRS-TR
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLT Non-Stocked Lead-Time 18 Weeks
Min.: 1 300
Mult.: 1 300
: 1 300

650 V SuperGaN
Renesas Electronics TP65H050G4PWS
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-3L Non-Stocked Lead-Time 18 Weeks
Min.: 960
Mult.: 240

TO-247-3L 650 V SuperGaN
Renesas Electronics TP65H050G4PYS
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L Non-Stocked Lead-Time 18 Weeks
Min.: 960
Mult.: 240

TO-247-4L 650 V SuperGaN
Renesas Electronics TP65H065G4PLSG-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in 8x8 PQFN PP Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

650 V SuperGaN
Renesas Electronics TP65H065G4PPS
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TO-220 Non-Stocked Lead-Time 18 Weeks
Min.: 1 250
Mult.: 1 250

650 V SuperGaN
Renesas Electronics TP65H065G4PQS-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TOLL Non-Stocked Lead-Time 18 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

650 V SuperGaN
Renesas Electronics TP65H065G4PRS-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TOLT Non-Stocked Lead-Time 18 Weeks
Min.: 1 300
Mult.: 1 300
: 1 300

650 V SuperGaN