Automotive Small Signal MOSFET Devices

Toshiba Automotive Small Signal MOSFET Devices are AEC-Q101 qualified compact body semi-power MOSFETs. The devices support a wide range of automotive applications for battery systems from 12V to 48V including power line load switches, LED headlights, and BMS cell balance circuitry. The SOT-23F is a Toshiba proprietary flat-lead featured package as opposed to the existing gull-wing lead type SOT-23 package. This improves thermal dissipation through increased heat sinking contact area between the package and the Print Circuit Board (PCB). As mount quality and reliability under harsh thermal environments is a usual concern for flat-lead type packages, thermal cycling requirements for automotive applications have been met. The devices also maintain footprint compatibility to the predecessor SOT-23 package. By combining sophisticated wafer processing and packaging techniques, the SSM3K341R and SSM3K361R in the SOT-23F package boasts industry-leading RDS(ON) of 36mΩ and 65mΩ (@VGS=4.5V) respectively. The low on-resistance allows a reduction in application size while also reducing energy losses. In addition, both devices support a maximum channel temperature of +175°C and can be used extensively in automotive applications where the operating environment is demanding.

Resultados: 10
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CRC) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación Empaquetado
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Channel 60V 6A AECQ MOSFET
8 853En existencias
Cinta cortada
₡530,87
₡243,58
₡215,47
₡166,03
Envase tipo carrete
₡129,08
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT UFM-3 N-Channel 1 Channel 60 V 6 A 36 mOhms 20 V 2.5 V 9.3 nC - 55 C + 175 C 1.8 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -20V -6A AECQ MOSFET
86 515En existencias
Cinta cortada
₡343,51
₡155,10
₡136,36
₡103,05
Envase tipo carrete
₡78,59
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -60V -3.5A AECQ MOSFET
105 060En existencias
Cinta cortada
₡338,30
₡152,50
₡133,76
₡100,97
Envase tipo carrete
₡77,03
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 3.5 A 164 mOhms - 20 V, 10 V 2 V 15.1 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -60V -2A AECQ MOSFET
7 149En existencias
Cinta cortada
₡338,30
₡152,50
₡133,76
₡100,97
Envase tipo carrete
₡77,03
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 2 A 360 mOhms - 20 V, 10 V 2 V 8.3 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -20V -2A AECQ MOSFET
5 000En existencias
Cinta cortada
₡265,44
₡118,67
₡104,09
₡78,07
Envase tipo carrete
₡58,29
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT S-Mini-3 P-Channel 1 Channel 20 V 2 A 150 mOhms - 8 V, 6 V 1 V 4.6 nC - 55 C + 150 C 1.2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -30V -6A AECQ MOSFET
11 713En existencias
Cinta cortada
₡270,64
₡121,79
₡106,70
₡80,15
Envase tipo carrete
₡71,30
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 30 V 6 A 42 mOhms - 12 V, 6 V 1.2 V 8.2 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P Channel -20V -3.9A AECQ MOSFET
20 358En existencias
Cinta cortada
₡218,60
₡96,29
₡84,32
₡62,98
Envase tipo carrete
₡46,32
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 3.9 A 93 mOhms - 8 V, 6 V 1 V 4.6 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Channel 60V 6A AECQ MOSFET
5 266En existencias
9 000Se espera el 28/9/2026
Cinta cortada
₡437,19
₡199,86
₡175,92
₡134,28
Envase tipo carrete
₡115,02
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 60 V 6 A 36 mOhms 20 V 1.5 V 9.3 nC - 55 C + 175 C 2.4 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Channel 100V 3.5A AECQ MOSFET
840En existencias
84 000En pedido
Cinta cortada
₡452,80
₡272,72
₡218,60
₡158,74
Envase tipo carrete
₡119,19
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 100 V 3.5 A 69 mOhms - 20 V, 10 V 2.5 V 3.2 nC - 55 C + 175 C 2.4 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Channel 100V 3.5A AECQ MOSFET
2 373En existencias
3 000Se espera el 29/1/2027
Cinta cortada
₡567,31
₡353,40
₡232,13
₡182,68
Envase tipo carrete
₡141,05
Ver
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT UFM-3 N-Channel 1 Channel 100 V 3.5 A 69 mOhms - 20 V, 10 V 2.5 V 3.2 nC - 55 C + 175 C 1.8 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel