TP65H050G4YS

Renesas Electronics
227-TP65H050G4YS
TP65H050G4YS

Mfr.:

Description:
GaN FETs 650V, 50mohm GaN FET in TO247-4L

Datasheet:
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Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
35 A
60 mOhms
- 20 V, + 20 V
4.8 V
16 nC
- 55 C
+ 150 C
132 W
Enhancement
SuperGaN
GaN
Brand: Renesas Electronics
Configuration: Cascode
Fall Time: 8 ns
Moisture Sensitive: Yes
Packaging: Tube
Product Type: GaN FETs
Rise Time: 5 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Type: GaN HEMT
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 40 ns
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Datasheet

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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H050G4YS 650V SuperGaN® FET

Renesas Electronics TP65H050G4YS 650V SuperGaN® FET is a 50mΩ Gallium Nitride (GaN)  normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.

In Stock: 560

Stock:
560 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₡-,--
Ext. Price:
₡-,--
Est. Tariff:

Pricing (CRC)

Qty. Unit Price
Ext. Price
₡5 438,86 ₡5 438,86
₡3 216,48 ₡32 164,80
₡2 727,24 ₡272 724,00
₡2 368,12 ₡1 420 872,00
₡2 326,48 ₡2 791 776,00
3 000 Quote

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