CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 5 028In Stock
3 600Expected 11/12/2026
Cut Tape
₡6 620,32
₡3 752,56
₡3 695,30
₡3 658,87
₡3 018,70
Reel
₡3 013,49
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 511In Stock
Cut Tape
₡2 029,82
₡1 332,39
₡931,63
₡765,08
₡733,86
Reel
₡619,35
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 815In Stock
Cut Tape
₡1 493,74
₡968,07
₡666,20
₡536,08
Reel
₡418,45
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 699In Stock
Cut Tape
₡1 301,16
₡837,95
₡572,51
₡455,93
Reel
₡354,44
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 601In Stock
1 800Expected 2/4/2027
Cut Tape
₡5 730,32
₡3 278,93
₡3 112,38
₡2 935,42
₡2 539,87
Reel
₡2 519,05
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 872In Stock
Cut Tape
₡4 460,39
₡2 425,37
₡2 227,59
₡2 191,16
₡1 910,11
Reel
₡1 785,20
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 796In Stock
1 800Expected 11/19/2026
Cut Tape
₡3 742,15
₡2 217,18
₡1 910,11
₡1 753,97
₡1 504,15
Reel
₡1 504,15
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 218In Stock
Cut Tape
₡2 456,60
₡1 623,85
₡1 150,23
₡988,88
Reel
₡801,52
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 582In Stock
Cut Tape
₡6 937,80
₡4 652,96
₡4 309,45
₡3 736,94
Reel
₡3 133,20
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 457In Stock
Cut Tape
₡5 740,73
₡3 195,66
₡3 049,93
₡2 493,03
Reel
₡2 487,82
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2 028In Stock
Cut Tape
₡4 595,71
₡2 503,44
₡2 243,21
Reel
₡1 982,97
₡1 858,06
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
₡3 835,83
₡2 055,84
₡1 884,08
₡1 514,55
Reel
₡1 462,51
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN