R60xxKNZ4 Power MOSFETs

ROHM Semiconductor R60xxKNZ4 Power MOSFETs are 600V, N-channel MOSFETs designed for switching applications. The R60xxKNZ4 provides low on-resistance and a fast switching speed. The ROHM R60xxKNZ4 Power MOSFETs are available in a TO-247 package that enables easy parallelling.

Results: 3
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 Mfr.
Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
ROHM Semiconductor MOSFETs TO247 600V 30A N-CH MOSFET
Datasheet
1 678In Stock
₡4 621,73
₡2 461,80
₡2 269,23
₡2 144,32
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 130 mOhms 20 V 5 V 56 nC - 55 C + 150 C 305 W Enhancement Tube
ROHM Semiconductor MOSFETs TO247 600V 24A N-CH MOSFET
Datasheet
1 156In Stock
₡4 002,38
₡2 196,36
₡2 024,61
₡2 014,20
₡1 868,47
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 24 A 165 mOhms 20 V 5 V 45 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFETs TO247 600V 35A N-CH MOSFET
Datasheet
560In Stock
₡5 334,77
₡3 075,95
₡3 013,49
₡2 800,10
₡2 617,94
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 35 A 102 mOhms 20 V 5 V 72 nC - 55 C + 150 C 379 W Enhancement Tube