RD3S100AAFRATL

ROHM Semiconductor
755-RD3S100AAFRATL
RD3S100AAFRATL

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Transistor, MOSFET Nch, 190V(Vdss), 10.0A(Id), (10V Drive)

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Atributo del producto Valor de atributo Seleccionar atributo
ROHM Semiconductor
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
190 V
10 A
182 mOhms
- 20 V, 20 V
2.5 V
52 nC
- 55 C
+ 150 C
85 W
Enhancement
AEC-Q101
Reel
Cut Tape
Marca: ROHM Semiconductor
Configuración: Single
Tiempo de caída: 75 ns
Transconductancia hacia delante - Mín.: 6 S
Tipo de producto: MOSFETs
Tiempo de subida: 20 ns
Serie: RD3
Cantidad de empaque de fábrica: 2500
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 140 ns
Tiempo típico de demora de encendido: 15 ns
Alias de las piezas n.º: RD3S100AAFRA
Peso de la unidad: 330 mg
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Atributos seleccionados: 0 

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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Specification Sheets

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Códigos de cumplimiento
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Clasificaciones de origen
País de origen:
Tailandia
País de origen del ensamblaje:
No disponible
País de difusión:
No disponible
El país está sujeto a cambios en el momento del envío.

RD3S100AAFRA N-Ch 190V 10A Power MOSFET

ROHM Semiconductor RD3S100AAFRA N-Ch 190V 10A Power MOSFET features a low on-resistance and fast switching speed. The RD3S100AAFRA MOSFET is can easily be set up for parallel use. The ROHM RD3S100AAFRA Power MOSFET is designed for switching power supply applications.

Automotive Solutions

ROHM Automotive Solutions contribute to the continuing evolution of the automotive sector through a stable, long-term supply of high-quality products. An expansive lineup supports the transition towards increased electrification and connectivity. ROHM can provide optimized solutions to suit various customer needs by focusing on safety, comfort, and the environment.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

AEC-Q101 Automotive MOSFETs

ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100VDSS to 100VDSS. These MOSFETs offer a drain-current ranging from -25A to 40A and RDS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

RD3x Automotive N-Channel Power MOSFETs

ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs are high-performance switching and rectifier devices designed for use in a wide range of power and signal applications. The AEC-Q101-qualified ROHM RD3x components feature low forward voltage, fast recovery time, and high surge current capability, making the MOSFETs ideal for efficient power conversion and protection in compact electronic systems. With options tailored for automotive, industrial, and consumer electronics, the RD3 family supports applications such as DC-DC converters, motor drivers, LED lighting, and battery-powered devices. A compact surface-mount (TO-252-3) package and low leakage current contribute to space-saving and energy-efficient designs, while high reliability ensures stable performance under demanding conditions.

En existencias: 2 284

Existencias:
2 284 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
16 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
₡-,--
Precio ext.:
₡-,--
Est. Tarifa:

Precio (CRC)

Cantidad Precio unitario
Precio ext.
₡2 029,82 ₡2 029,82
₡1 327,19 ₡13 271,90
₡931,63 ₡93 163,00
₡822,34 ₡411 170,00
₡765,08 ₡765 080,00
Envase tipo carrete completo (pedir en múltiplos de 2500)
₡718,24 ₡1 795 600,00

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