EPC2361

Name: EPC EPC2361
Brand: EPC
SKU: 65-EPC2361
Price: 4986.06 CRC
Availability: InStock

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Mouser #:

65-EPC2361

Mfr. #:

EPC2361

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

Lifecycle:

New At Mouser

Datasheet:

EPC2361 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	QFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	- 4 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Technology:	GaN
Brand:	EPC
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	35,200 mg

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Datasheet

EPC2361 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

EPC2361 eGaN® FET

EPC EPC2361 Enhancement-Mode Gallium Nitride Field-Effect Transistor (eGaN^® FET) is a 100V power transistor engineered for efficient power conversion. The device offers a typical 0.75mΩ on-resistance, high-current capability, ultra-low gate charge, and zero reverse-recovery charge. These characteristics support high switching frequencies and reduced power losses in demanding applications.

FEATURED PRODUCTS

EPC

EPC2305 Enhancement-Mode GaN Power Transistor

Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.

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EPC2304 Enhancement-Mode GaN Power Transistor

Handles tasks where ultra-high switching frequency and low on-time are advantageous.

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EPC2302 Enhancement-Mode GaN Power Transistor

Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.

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View All Newest Products from EPC

In Stock: 11 724

Stock:: 11 724

Can Ship Immediately

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On Order:: 18 000

Expected 2/18/2027
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CRC)

Qty.	Unit Price	Ext. Price
	₡4 986,06	₡4 986,06
	₡2 748,06	₡27 480,60
	₡2 529,46	₡252 946,00
	₡2 373,32	₡1 186 660,00
	₡2 175,55	₡2 175 550,00
Full Reel (Order in multiples of 3000)
	₡2 029,82	₡6 089 460,00

EPC2361

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Mfr.: EPC

Description: GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

EPC2361 eGaN® FET

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Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

FEATURED PRODUCTS

EPC