CoolSIC SiC MOSFETs

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (CRC) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 1 691In Stock
960Expected 11/26/2026
₡24 160,00
₡17 805,12
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 2 329In Stock
₡13 781,92
₡11 039,07
₡9 545,34
₡9 030,07
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 1 206In Stock
₡11 674,04
₡8 723,00
₡7 541,54
Min.: 1
Mult.: 1
Max.: 240
Through Hole TO-247-4 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
5 907On Order
₡47 570,54
₡39 305,55
₡35 407,26
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
3 859On Order
₡9 810,77
₡7 328,15
₡6 334,06
₡5 995,76
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC