G2R1000MT33J-TR

GeneSiC Semiconductor
905-G2R1000MT33J-TR
G2R1000MT33J-TR

Mfr.:

Description:
SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about GeneSiC Semiconductor G2R1000MT33J-TR

Product Attribute Attribute Value Select Attribute
Navitas Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Brand: GeneSiC Semiconductor
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Series: G2R
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. GeneSiC Semiconductor 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.

3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

In Stock: 220

Stock:
220
Can Ship Immediately
On Order:
800
Expected 12/28/2026
Factory Lead-Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₡-,--
Ext. Price:
₡-,--
Est. Tariff:

Pricing (CRC)

Qty. Unit Price
Ext. Price
₡14 156,66 ₡14 156,66
₡10 284,40 ₡102 844,00
₡9 763,93 ₡976 393,00
₡9 238,26 ₡4 619 130,00
Full Reel (Order in multiples of 800)
₡8 603,29 ₡6 882 632,00

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.