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Littelfuse IXSJxN120R1 1200V SiC Power MOSFETs

Littelfuse IXSJxN120R1 1200V Silicon Carbide (SiC) Power MOSFETs are high-performance devices designed for demanding power conversion applications. The Littelfuse IXSJxN120R1 MOSFETs leverage the superior properties of SiC technology to deliver low switching losses, high efficiency, and excellent thermal performance. The IXSJ25N120R1 offers a typical RDS(on) of 80mΩ and is optimized for lower current applications, while the IXSJ43N120R1 and IXSJ80N120R1 provide lower on-resistance values of 45mΩ and 20mΩ, respectively, supporting higher current handling capabilities. All three devices feature fast switching speeds, robust avalanche capability, and a Kelvin source pin for improved gate drive control. These characteristics make the IXSJxN120R1 series ideal for use in electric vehicle inverters, solar inverters, industrial motor drives, and high-efficiency power supplies.

Features

  • Up to 1200V blocking voltage with low RDS(on) options of 18mΩ, 36mΩ, or 62mΩ
  • Low gate charge options (52nC, 79nC, or 154nC)
  • Low input capacitance options (1498pF, 2453pF, or 4522pF)
  • Flexible gate voltage range (15V to 18V) and 0V recommended turn-off gate voltage
  • Low conduction losses and reduced heat dissipation
  • Low gate drive power requirements
  • Supports high-speed switching with reduced gate drive losses
  • ISO247-3L package
    • High-performance ceramic-based isolated package improves overall thermal resistance Rth(j-h) and power handling capability
    • 2500VAC (RMS) isolation voltage for 1 minute
    • Reduced EMI attributed to the small chip-to-heatsink stray capacitance
    • Industry standard package outline

Applications

  • EV charging infrastructures
  • Solar inverters
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Motor drives
  • DC/DC converters
  • Battery chargers
  • Induction heating
  • High-frequency applications

Datasheets

Pinout Diagram

Mechanical Drawing - Littelfuse IXSJxN120R1 1200V SiC Power MOSFETs

Related MOSFETs

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).

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Publicado: 2025-06-17 | Actualizado: 2026-01-06