Nexperia BC847xQC NPN General Purpose Transistors

Nexperia BC847xQC NPN General Purpose Transistors feature high power dissipation capability, 0.5mm low package height, and are available in the DFN1412D-3 SMD package. These transistors operate at 45V collector-emitter voltage (VCEO), 100mA collector current (IC), 200mA peak collector current (ICM), and -55°C and 150°C ambient temperature range. The BC847xQC transistors offer a smaller footprint compared to conventional leaded SMD packages and are used in applications such as general-purpose switching/amplification and space-restricted applications.

Features

  • High power dissipation capability
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Smaller footprint compared to conventional leaded SMD packages
  • 0.5mm low package height
  • AEC-Q101 qualified

Specifications

  • 45V collector-emitter voltage (VCEO)
  • 100mA collector current (IC)
  • 200mA peak collector current (ICM)
  • 10dB noise figure
  • 6V emitter-base breakdown voltage (V(BR)EBO)
  • 45V collector-emitter breakdown voltage (V(BR)CEO)
  • 50V collector-base breakdown voltage (V(BR)CBO)
  • -55°C and 150°C ambient temperature range

Applications

  • General-purpose switching and amplification
  • Space restricted applications

Characteristics Curve

Performance Graph - Nexperia BC847xQC NPN General Purpose Transistors
Publicado: 2022-01-04 | Actualizado: 2023-10-31