Nexperia eMode GaN FETs
Nexperia eMode GaN FETs come in a voltage range from 100V to 650V with superior switching performance. These GaN FETs offer fast transition capabilities through their low QC and QOSS values, resulting in excellent power efficiency.
Nexperia Low Voltage (<200V) eMode GaN FETs deliver optimum flexibility in power systems. These devices enable faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Nexperia High Voltage (200V-650V) eMode GaN FETs deliver optimum flexibility in power systems and are ideal for mid-power applications <1kW. These devices bring improved efficiency to 650V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Features
- Enhancement mode - normally-off power switch
- Ultra high-frequency switching capability
- No body diode
- Low gate charge, low output charge
- High efficiency and high power density
- Qualified for standard applications
- ESD protection
- Lead free, RoHS and REACH compliant
Applications
- High power density and high-efficiency power conversion
- AC-to-DC converters
- Fast battery charging, mobile phone, laptop, tablet, and USB Type-C™ chargers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Motor drives
- Class D audio amplifiers
Videos
Additional Resources
- Power GaN Technology: The need for efficient power conversion
- Nexperia launches e-mode GAN FETs for low and high voltage applications
- Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs
- 650 V GaN FETs – from invention to industrialization
- Eliminating EMC By Replacing A MOSFET With A GaN Transistor
- Power GaN technology: the need for efficient power conversion
- Power Gallium Nitride (GaN) FETs Leaflet
- Power GaN: The need for efficient power conversion
- Broadening GaN FET applications with e-mode
- GaN shines a light on PV inverter efficiency
Related GaN FETs
Nexperia GaN FETs for Industrial Applications
Efficient power use and efficiencies in power conversion and control.
Nexperia FET de nitruro de galio (GaN) GAN041-650WSB
Ofrecen un voltaje de fuente de drenaje de 650 V, una corriente de drenaje nominal de 47.2 A y una resistencia máxima de 41 m Ω.
| N.º de artículo | Hoja de datos | Paquete / Cubierta | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Dp - Disipación de potencia | Rds On - Resistencia entre drenaje y fuente |
|---|---|---|---|---|---|---|
| GAN140-650EBEZ |  |
DFN-8080-8 | 650 V | 17 A | 113 W | 140 mOhms |
| GANE140-700BBAZ | |
TO-252-3 | 700 V | 17 A | 110 W | 140 mOhms |
| GANE190-700BBAZ | |
TO-252-3 | 700 V | 11.5 A | 84 W | 190 mOhms |
| GANE350-650FBAZ | |
DFN-5 | 650 V | 6 A | 65 W | 350 mOhms |
| GANE350-700BBAZ | |
TO-252-3 | 700 V | 6 A | 47 W | 350 mOhms |
| GAN080-650EBEZ | |
DFN-8080-8 | 650 V | 29 A | 188 W | 80 mOhms |
| GAN190-650FBEZ | |
DFN-5060-5 | 650 V | 11.5 A | 125 W | 190 mOhms |
| GAN3R2-100CBEAZ | |
WLCSP-8 | 100 V | 60 A | 394 W | 3.2 mOhms |
| GAN7R0-150LBEZ | |
FCLGA-3 | 150 V | 28 A | 28 W | 7 mOhms |
| GANE240-700BBAZ | |
TO-252-3 | 700 V | 10 A | 74 W | 240 mOhms |