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onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package. This MOSFET has a low RDS(on) to minimize conduction losses and a low QG and capacitance to minimize driver losses. The onsemi NVBYST0D6N08X is AEC-Q101 qualified, PPAP capable, lead-free, Halogen-free/BFR-free, and RoHS-compliant. A typical application for this MOSFET is Synchronous Rectification (SR) in DC-DC and AC-DC, a primary switch in an isolated DC-DC converter, motor drives, and automotive 48V systems.

Features

  • Low QRR, soft recovery body diode
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • Lead-free, halogen-free/BFR-free, and RoHS-compliant

Applications

  • Synchronous Rectification (SR) in DC-DC and AC-DC
  • Primary switch in an isolated DC-DC converter
  • Motor drives
  • Automotive 48V system

Specifications

  • 80V (max.) drain-to-source voltage (VDSS)
  • 20V (max.) gate-to-source voltage (VGS)
  • 767A (max.) continuous drain current (ID) at TC = +25°C, 542A at TC = +100°C
  • 750W (max.) power dissipation (PD) at +25°C
  • 2443A (max.) pulsed drain current (IDM) at TC = 25°C, tp = 100µs
  • -55°C to +175°C operating junction (Tj) and storage temperature range (Tstg)
  • 0.56mΩ (typ.) drain-to-source on resistance [RDS(on)] (VGS = 10V, ID = 80A, TJ = +25°C)
  • 16419pF (typ.) input capacitance (CISS) (VDS = 40V, VGS = 0V, f = 1MHz)
  • 4654pF (typ.) output capacitance (COSS) (VDS = 40V, VGS = 0V, f = 1MHz)
  • 228nC (typ.) total gate charge [QG(TOT)] (VDD = 40V, ID = 80A, VGS = 10V)

Circuit/Marking Diagrams

Schematic - onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET
Publicado: 2025-11-24 | Actualizado: 2025-12-26