ROHM Semiconductor RN781VM Low rF Pin Diode
ROHM Semiconductor RN781VM Low High-Frequency Forward Resistance (rF) Pin Diode is a compact, high-performance pin diode specifically designed for RF switching and attenuation applications. With a low (4.0Ω maximum) forward resistance (rF), this ROHM diode minimizes signal loss, ideal for high-frequency circuits where efficient signal transmission and fast switching are essential. Housed in a space-saving SOD-323FL surface-mount package, the RN781VM supports streamlined PCB layouts and automated manufacturing processes.
This diode offers a reverse voltage rating of 100V (maximum) and can handle forward currents up to 50mA, providing robust performance across a wide range of operating conditions. A maximum 4.0Ω forward resistance (at 10mA and 100MHz) and a low 0.4pF junction capacitance (at 30V and 1.0MHz) contribute to excellent isolation and fast response times. With a forward voltage of 1.0V maximum and a reverse leakage current of 10μA, the ROHM RN781VM is well-suited for RF switch circuits, attenuators, mobile communication devices, and wireless systems requiring reliable and efficient signal control.
Features
- High reliability
- Small mold type
- Epitaxial planar structure
- Single configuration
- Low high-frequency forward resistance
- Low capacitance between terminals
- Surface-mount SOD-323FL (SC-90A) package
- RoHS compliant
Applications
- Auto gain control circuits
- Antenna amplifiers and attenuators
Specifications
- 2x terminals
- 100V maximum reverse voltage
- 50mA maximum forward current
- 1.0V maximum forward voltage at 10mA
- 0.4pF maximum capacitance between terminals at 35V, 1.0MHz
- 4.0Ω maximum high-frequency forward resistance at 10mA, 100MHz
- 10μA maximum reverse current at 100V
- +150°C maximum junction temperature
- 2.5mm x 1.25mm package, 0.9mm thickness
Inner Circuit
