ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes

ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes are silicon epitaxial planar-structured diodes with 175°C. These diodes feature a 200V repetitive peak reverse voltage, ultra-low reverse current, 200V reverse voltage, and high reliability. The ultra-low IR Schottky barrier diodes are used in switching power supply, freewheel diodes, and reverse polarity protection applications.

Features

  • Silicon epitaxial planar structure
  • 200V repetitive peak reverse voltage (Duty≤0.5)
  • Ultra-low reverse current
  • 200V reverse voltage
  • High reliability
  • 175°C junction temperature

Applications

  • Switching power supply
  • Freewheel diodes
  • Reverse polarity protection

Normalized Transient Thermal Impedance from Junction to Case (Per Device)

Performance Graph - ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes
View Results ( 16 ) Page
N.º de artículo Hoja de datos If - Corriente directa Vr - Tensión inversa Vf - Tensión directa Vrrm - Tensión inversa repetitiva Ir - Corriente inversa Ifsm - Sobrecorriente en sentido directo Temperatura de trabajo máxima
RB028RSM20STFTL1 RB028RSM20STFTL1 Hoja de datos 12 A 200 V 840 mV 200 V 250 nA 135 A + 175 C
RB028RSM20STL1 RB028RSM20STL1 Hoja de datos 12 A 200 V 840 mV 200 V 250 nA 135 A + 175 C
RB038RSM20STFTL1 RB038RSM20STFTL1 Hoja de datos 4 A 200 V 790 mV 200 V 140 nA 80 A + 175 C
RB038RSM20STL1 RB038RSM20STL1 Hoja de datos 4 A 200 V 790 mV 200 V 140 nA 80 A + 175 C
RB048RSM20STFTL1 RB048RSM20STFTL1 Hoja de datos 8 A 200 V 830 mV 200 V 230 nA 95 A + 175 C
RB048RSM20STL1 RB048RSM20STL1 Hoja de datos 8 A 200 V 830 mV 200 V 230 nA 95 A + 175 C
RB078RSM20STFTL1 RB078RSM20STFTL1 Hoja de datos 5 A 200 V 810 mV 200 V 140 nA 80 A + 175 C
RB078RSM20STL1 RB078RSM20STL1 Hoja de datos 5 A 200 V 810 mV 200 V 140 nA 80 A + 175 C
RB088RSM20STFTL1 RB088RSM20STFTL1 Hoja de datos 10 A 200 V 830 mV 200 V 250 nA 135 A + 175 C
RB088RSM20STL1 RB088RSM20STL1 Hoja de datos 10 A 200 V 830 mV 200 V 250 nA 135 A + 175 C
Publicado: 2025-06-16 | Actualizado: 2025-07-11