Winbond W66BP6NB/W66CP2NQ SDRAM LPDDR4

Winbond W66BP6NB/W66CP2NQ SDRAM LPDDR4 offers a Single-Die-Package (SDP) or Dual-Die-Package (DDP) and a 2 or 4 clocks architecture on the Command/Address (CA) bus. The LPDDR4 utilizes the 2 or 4 clocks architecture on the CA bus to reduce the number of input pins in the system. The 6-bit CA bus contains the command, address, and bank information. Each command uses a 1, 2, or 4 clock cycle, during which command information is transferred on the positive edge of the clock.

The Single-Die-Package (SDP) provides 16Mb x 16DQ x 8-banks x 1 channel with 2Gb (2,147,483,648 bits) density. The Dual-Die-Package (DDP) offers 16Mb x 16DQ x 8-banks x 2 channels with 4Gb (4,294,967,296 bits) density.

Features

VDD1 = 1.7V to 1.95V
VDD2/VDDQ = 1.06V to 1.17V
Data width of x16/x32
Clock rate of up to 2133MHz
Data rate of up to 4267Mbps
8 Internal banks for concurrent operation
16n pre-fetch operation
LVSTL_11 Interface
Burst length of 16, 32, on-the-fly 16 or 32
Sequential burst type
Programmable driver strength
Coded command input in double clock edges
Single data rate architecture on the CA bus
Double data rate architecture on the DQ pins
Differential clock input
Bidirectional differential data strobe
Input clock stop and frequency change
On-die termination (ODT)
Write leveling support

Programmable Read and Write Latencies (RL/WL)
CA training support
DQ-DQS training
Refresh features:
- Auto-refresh (per bank / all bank)
- Partial array self-refresh
- Auto temperature-compensated self-refresh
Post package repair
Target row refresh mode
Frequency-Set-Points for fast frequency switch
Support write mask and Data Bus Inversion (DBI)
Support boundary scan for connectivity test
WFBGA 200 Ball (10mm x 14.5mm2) package
-40°C ≤ TCASE ≤ 105°C Operating temperature range