Wolfspeed C4MV 650V Discrete SiC MOSFETs
Wolfspeed C4MV 650V Discrete SiC MOSFETs are 3rd-generation devices that enable smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The C4MV 650V MOSFET family is ideal for applications including high-performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
Features
- Industry-compatible 15V to 18V drive voltage range
- Low on-state resistance over temperature
- Low parasitic capacitances
- Fast diode with ultra-low reverse recovery
- High temperature operation (TJ = +175°C)
- Kelvin source pin
- Small form factor
- Low lead inductance
- Low thermal impedance
- High power dissipation capability
- Improves system efficiency with lower switching and conduction losses
- Industrial qualified
- High-speed switching with low capacitances
- Improves system-level power density
- Soft body diode to minimize voltage overshoot
- Reduces system size, weight, and cooling requirements
- Enables emerging hard switching topologies (Totem-Pole PFC)
- Optimized, industry-standard TOLT top-side cooled (TSC) package with separate driver source pin
- Moisture Sensitivity Level (MSL) 1
- Halogen-free and RoHS-compliant
Applications
- EV chargers
- Solar/energy storage systems (ESS)
- Motor control
- Industrial power supplies
- High voltage DC/DC converters
Resources
- LTspice and PLECS Models
- Application Note PRD-08367 - EV Charging Power Topologies Design Guidebook
- Application Note PRD-06752 - PCB Layout Techniques for Discrete SiC MOSFETs
- Application Note PRD-05652 - Mounting Recommendations and Thermal Measurement for Wolfspeed SiC Power Devices in Through-Hole Packages
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Publicado: 2025-12-04
| Actualizado: 2025-12-22