|
|
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
₡5 183,84
-
337In Stock
-
New Product
|
Mouser Part #
511-SGT070R70HTO
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
337In Stock
|
|
|
₡5 183,84
|
|
|
₡2 857,36
|
|
|
₡2 669,99
|
|
|
₡2 180,75
|
|
|
₡2 175,55
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
TO-LL-11
|
|
|
700 V
|
26 A
|
70 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
231 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
₡3 565,19
-
768In Stock
-
New Product
|
Mouser Part #
511-SGT080R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
768In Stock
|
|
|
₡3 565,19
|
|
|
₡2 399,35
|
|
|
₡1 738,35
|
|
|
₡1 629,06
|
|
|
₡1 415,67
|
|
|
₡1 327,19
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
29 A
|
80 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
- SGT105R70ILB
- STMicroelectronics
-
1:
₡3 096,77
-
768In Stock
-
New Product
|
Mouser Part #
511-SGT105R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
|
|
768In Stock
|
|
|
₡3 096,77
|
|
|
₡1 629,06
|
|
|
₡1 483,33
|
|
|
₡1 348,01
|
|
|
₡1 290,75
|
|
|
₡1 098,18
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
21.7 A
|
105 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
4.8 nC
|
- 55 C
|
+ 150 C
|
158 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
₡2 638,76
-
637In Stock
-
New Product
|
Mouser Part #
511-SGT140R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
637In Stock
|
|
|
₡2 638,76
|
|
|
₡1 884,08
|
|
|
₡1 415,67
|
|
|
₡1 363,62
|
|
|
View
|
|
|
₡978,47
|
|
|
₡1 155,43
|
|
|
₡978,47
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
- SGT190R70ILB
- STMicroelectronics
-
1:
₡2 102,68
-
693In Stock
-
New Product
|
Mouser Part #
511-SGT190R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
|
|
693In Stock
|
|
|
₡2 102,68
|
|
|
₡1 379,23
|
|
|
₡1 025,32
|
|
|
₡921,22
|
|
|
₡858,77
|
|
|
₡723,45
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
11.5 A
|
190 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ILB
- STMicroelectronics
-
1:
₡2 009,00
-
693In Stock
-
New Product
|
Mouser Part #
511-SGT240R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
693In Stock
|
|
|
₡2 009,00
|
|
|
₡1 311,57
|
|
|
₡957,66
|
|
|
₡957,66
|
|
Min.: 1
Mult.: 1
Max.: 100
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
|
|
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
₡1 457,30
-
652In Stock
-
New Product
|
Mouser Part #
511-SGT350R70GTK
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
652In Stock
|
|
|
₡1 457,30
|
|
|
₡718,24
|
|
|
₡645,38
|
|
|
₡518,38
|
|
|
₡433,03
|
|
|
View
|
|
|
₡499,65
|
|
|
₡395,55
|
|
Min.: 1
Mult.: 1
:
2 500
|
|
|
SMD/SMT
|
DPAK-3
|
|
|
700 V
|
6 A
|
350 mOhms
|
- 1.4 V, + 7 V
|
2.5 V
|
1.5 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
|
|
|
GaN FETs 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
- SGT1D5R10MEA
- STMicroelectronics
-
1:
₡4 314,66
-
500Expected 8/18/2026
-
New Product
|
Mouser Part #
511-SGT1D5R10MEA
New Product
|
STMicroelectronics
|
GaN FETs 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
|
|
500Expected 8/18/2026
|
|
|
₡4 314,66
|
|
|
₡3 039,52
|
|
|
₡2 456,60
|
|
|
₡2 185,95
|
|
|
₡1 753,97
|
|
|
₡1 753,97
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
FCLGA-8
|
N-Channel
|
1 Channel
|
100 V
|
501 A
|
1.5 mOhms
|
- 4 V to + 6 V
|
2.1 V
|
15.9 nC
|
- 40 C
|
+ 150 C
|
735 W
|
Enhancement
|
|
|
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
- SGT3D5R10MEB
- STMicroelectronics
-
1:
₡1 936,13
-
500Expected 8/18/2026
-
New Product
|
Mouser Part #
511-SGT3D5R10MEB
New Product
|
STMicroelectronics
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
|
|
500Expected 8/18/2026
|
|
|
₡1 936,13
|
|
|
₡1 264,73
|
|
|
₡921,22
|
|
|
₡770,29
|
|
|
₡666,20
|
|
|
View
|
|
|
₡713,04
|
|
|
₡603,74
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
FCLGA-8
|
N-Channel
|
1 Channel
|
100 V
|
201 A
|
3.5 mOhms
|
- 4 V to + 6 V
|
2.1 V
|
6.3 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
|
|
|
GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
- SGT65R65AL
- STMicroelectronics
-
3 000:
₡2 852,15
-
Non-Stocked Lead-Time 52 Weeks
|
Mouser Part #
511-SGT65R65AL
|
STMicroelectronics
|
GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
Min.: 3 000
Mult.: 3 000
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
25 A
|
65 mOhms
|
+ 6 V
|
1.8 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
305 W
|
|
|
Costa Rica