|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
₡39 966,54
-
33In Stock
-
61On Order
-
New Product
|
Mouser Part #
511-SCTHC250N120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
33In Stock
61On Order
|
|
|
₡39 966,54
|
|
|
₡31 680,73
|
|
|
₡27 032,97
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
STPAK-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
8.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
₡9 467,27
-
2 309In Stock
|
Mouser Part #
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2 309In Stock
|
|
|
₡9 467,27
|
|
|
₡6 714,00
|
|
|
₡5 844,83
|
|
|
₡5 839,62
|
|
|
View
|
|
|
₡4 777,87
|
|
|
₡5 537,75
|
|
|
₡4 777,87
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
3 000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
₡11 512,69
-
7In Stock
-
600Expected 6/11/2027
-
New Product
|
Mouser Part #
511-SCT019HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
7In Stock
600Expected 6/11/2027
|
|
|
₡11 512,69
|
|
|
₡8 395,11
|
|
|
₡7 015,87
|
|
|
₡6 667,16
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
₡11 845,79
-
11In Stock
-
1 200On Order
-
New Product
|
Mouser Part #
511-SCT020HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
11In Stock
1 200On Order
On Order:
600 Expected 3/5/2027
600 Expected 3/12/2027
Factory Lead-Time:
36 Weeks
|
|
|
₡11 845,79
|
|
|
₡8 847,91
|
|
|
₡7 468,68
|
|
|
₡6 766,05
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
₡11 554,33
-
630In Stock
|
Mouser Part #
511-SCT012W90G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
630In Stock
|
|
|
₡11 554,33
|
|
|
₡7 281,31
|
|
|
₡6 162,31
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
₡13 906,84
-
542In Stock
|
Mouser Part #
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
542In Stock
|
|
|
₡13 906,84
|
|
|
₡11 132,75
|
|
|
₡9 628,61
|
|
|
₡9 113,35
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
₡9 722,29
-
448In Stock
|
Mouser Part #
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448In Stock
|
|
|
₡9 722,29
|
|
|
₡7 401,02
|
|
|
₡6 167,51
|
|
|
₡5 496,11
|
|
|
₡5 136,99
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
₡10 529,02
-
311In Stock
-
600On Order
|
Mouser Part #
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
311In Stock
600On Order
|
|
|
₡10 529,02
|
|
|
₡6 583,89
|
|
|
₡6 261,20
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
₡9 862,82
-
289In Stock
-
600Expected 5/21/2027
|
Mouser Part #
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
289In Stock
600Expected 5/21/2027
|
|
|
₡9 862,82
|
|
|
₡6 136,29
|
|
|
₡5 756,35
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
₡7 083,53
-
671In Stock
|
Mouser Part #
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
671In Stock
|
|
|
₡7 083,53
|
|
|
₡4 944,42
|
|
|
₡4 017,99
|
|
|
₡3 752,56
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
₡8 618,91
-
246In Stock
|
Mouser Part #
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246In Stock
|
|
|
₡8 618,91
|
|
|
₡6 578,68
|
|
|
₡4 569,69
|
|
|
₡3 887,88
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
₡7 322,95
-
243In Stock
-
600Expected 1/29/2027
|
Mouser Part #
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
243In Stock
600Expected 1/29/2027
|
|
|
₡7 322,95
|
|
|
₡5 121,38
|
|
|
₡3 877,47
|
|
|
₡3 424,66
|
|
|
₡3 419,46
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
₡7 229,26
-
336In Stock
|
Mouser Part #
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
336In Stock
|
|
|
₡7 229,26
|
|
|
₡5 079,74
|
|
|
₡3 877,47
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
₡6 006,17
-
487In Stock
|
Mouser Part #
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
487In Stock
|
|
|
₡6 006,17
|
|
|
₡3 606,83
|
|
|
₡3 055,13
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
₡6 984,65
-
481In Stock
|
Mouser Part #
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481In Stock
|
|
|
₡6 984,65
|
|
|
₡5 058,92
|
|
|
₡4 330,27
|
|
|
₡3 731,74
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
₡4 762,26
-
1 414In Stock
|
Mouser Part #
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1 414In Stock
|
|
|
₡4 762,26
|
|
|
₡3 252,91
|
|
|
₡2 685,60
|
|
|
₡2 440,98
|
|
|
₡2 232,80
|
|
|
₡2 232,80
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
₡11 455,44
-
11In Stock
-
1 000Expected 3/5/2027
|
Mouser Part #
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
11In Stock
1 000Expected 3/5/2027
|
|
|
₡11 455,44
|
|
|
₡8 218,15
|
|
|
₡7 463,47
|
|
|
₡7 458,27
|
|
|
₡6 969,03
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
₡8 624,11
-
22In Stock
-
1 000Expected 1/29/2027
|
Mouser Part #
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
22In Stock
1 000Expected 1/29/2027
|
|
|
₡8 624,11
|
|
|
₡6 084,24
|
|
|
₡5 183,84
|
|
|
₡4 840,33
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
₡10 981,82
-
13In Stock
-
1 200On Order
|
Mouser Part #
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
13In Stock
1 200On Order
On Order:
600 Expected 8/13/2027
600 Expected 8/20/2027
Factory Lead-Time:
36 Weeks
|
|
|
₡10 981,82
|
|
|
₡7 577,98
|
|
|
₡6 916,99
|
|
|
₡6 360,09
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
₡7 093,94
-
21In Stock
-
600On Order
|
Mouser Part #
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
21In Stock
600On Order
|
|
|
₡7 093,94
|
|
|
₡4 949,63
|
|
|
₡4 023,20
|
|
|
₡3 757,76
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
₡7 853,82
-
20In Stock
-
1 200Expected 1/29/2027
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Mouser Part #
511-SCT070W120G3-4AG
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STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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20In Stock
1 200Expected 1/29/2027
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₡7 853,82
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₡5 891,67
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₡4 580,10
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₡4 044,02
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-4
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N-Channel
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1 Channel
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1.2 kV
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30 A
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87 mOhms
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- 18 V, + 18 V
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4.2 V
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41 nC
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- 55 C
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+ 200 C
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236 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
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1:
₡6 302,84
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760In Stock
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Mouser Part #
511-SCT040H65G3AG
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STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
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760In Stock
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₡6 302,84
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₡4 371,91
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₡3 450,69
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₡3 263,32
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Min.: 1
Mult.: 1
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1 000
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SMD/SMT
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N-Channel
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1 Channel
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650 V
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30 A
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40 mOhms
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- 10 V, + 22 V
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4.2 V
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39.5 nC
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- 55 C
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+ 175 C
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221 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
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1:
₡4 949,63
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459In Stock
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Mouser Part #
511-SCT1000N170
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STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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459In Stock
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₡4 949,63
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₡3 383,03
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₡2 815,72
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₡2 092,27
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₡2 045,43
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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1.7 kV
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6 A
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1 Ohms
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- 10 V, + 25 V
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2.1 V
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14 nC
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- 55 C
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+ 200 C
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120 W
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Enhancement
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
₡8 905,16
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334In Stock
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Mouser Part #
511-SCT20N120AG
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STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
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334In Stock
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₡8 905,16
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₡6 313,25
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₡4 699,80
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₡4 215,77
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Quote
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Quote
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Min.: 1
Mult.: 1
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Through Hole
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N-Channel
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1 Channel
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1.2 kV
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20 A
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239 mOhms
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- 20 V, + 20 V
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3.5 V
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45 nC
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- 55 C
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+ 200 C
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175 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
₡16 238,52
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1 301In Stock
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Mouser Part #
511-SCTL90N65G2V
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STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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1 301In Stock
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₡16 238,52
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₡11 892,63
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₡11 611,58
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₡11 606,38
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₡10 997,43
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₡10 997,43
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Min.: 1
Mult.: 1
:
3 000
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SMD/SMT
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PowerFLAT-5
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N-Channel
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1 Channel
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650 V
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40 A
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18 mOhms
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- 10 V, + 22 V
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5 V
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157 nC
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- 55 C
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+ 175 C
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935 W
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Enhancement
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