onsemi FGB5065G2-F085 EcoSPARK® 2 HV-HE IGBT
onsemi FGB5065G2-F085 EcoSPARK® 2 HV-HE Insulated-Gate Bipolar Transistor (IGBT) is a 650V N-channel ignition device for PTC heater and high current system applications. The AEC-Q101 qualified FGB5065G2-F085 operates within a -55°C to +175°C temperature range and offers 500mJ SCIS energy at +25°C. Applications include high-current systems, PTC heater circuits, automotive, and other rugged applications.
Features
- Automotive qualified to AEC-Q101
- 500mJ SCIS energy at +25°C
- Logic-level gate drive
- PPAP capable
- Lead-free and RoHS-compliant
Applications
- Automotive
- PTC heater circuits
- High current systems
- Rugged applications
Specifications
- 650V maximum collector-to-emitter breakdown voltage
- 28V maximum emitter-to-collector voltage, reverse battery condition
- ±10V maximum gate-to-emitter voltage continuous
- 300W maximum total power dissipation at +25°C
- 2W/°C maximum power dissipation derating at +25°C
- -55°C to +175°C operating junction temperature range
- +260°C maximum reflow soldering temperature according to JESD020C
- Maximum electrostatic discharge (ESD)
- 8kV human body model (HBM) at 100pF, 1500Ω
- 5kV charged-device model (CDM) at 1Ω
- D2PAK package
Schematic
Publicado: 2024-05-03
| Actualizado: 2025-03-31