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STMicroelectronics STGWA50IH65R 650V Soft-Switching IHR IGBT

STMicroelectronics STGWA50IH65R 650V Soft-Switching IHR Insulated-Gate Bipolar Transistor (IGBT) uses an advanced, proprietary trench-gate field-stop structure with a monolithic integrated body diode. Optimized for both conduction and switching losses, the STMicroelectronics STGWA50IH65R delivers soft commutation. This long-lead, TO-247 packaged IGBT maximizes efficiency for resonant and soft-switching applications.

Features

  • Reverse-conducting 650V, 50A, soft-switching IHR series IGBT in a TO-247 long leads package
  • Designed for soft-commutation only
  • +175°C maximum junction temperature
  • 1.45V typical collector-emitter saturation voltage at 50A continuous collector current
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Monolithic integrated diode with low voltage drop
  • Positive collector-emitter saturation voltage temperature coefficient
  • RoHS-compliant

Applications

  • Induction cooking
  • Resonant converters
  • Microwave ovens

Specifications

  • 650V maximum collector-emitter voltage
  • Maximum continuous collector current
    • 97A at +25°C
    • 61A at +100°C
  • 200A maximum pulsed collector current
  • ±20V maximum gate-emitter voltage
  • ±30V maximum transient gate-emitter voltage
  • Maximum continuous forward current
    • 86A at +25°C
    • 52A at +100°C
  • 200A maximum pulsed forward current
  • 306W maximum total power dissipation
  • Static characteristics
    • 650V minimum collector-emitter breakdown voltage
    • 1.75V maximum collector-emitter saturation voltage
    • 1.75V maximum forward on-voltage
    • 4.5V to 6.5V gate threshold voltage range
    • 25µA maximum collector cut-off current
    • ±250nA maximum gate-emitter leakage current
  • Typical dynamic characteristics
    • 2949pF input capacitance
    • 102pF output capacitance
    • 80pF reverse transfer capacitance
    • 154nC total gate charge
    • 23nC gate-emitter charge
    • 77nC gate-collector charge
  • Typical IGBT switching characteristics
    • Inductive load
      • 177ns to 208ns turn-off-delay time range
      • 38ns to 75ns current fall time range
      • 736μJ to 1070μJ turn-off switching energy range
    • 474μJ to 236μJ turn-off switching energy for a snubbed inductive load
  • -55°C to +175°C operating junction temperature range
  • Thermal resistance
    • 0.49°C/W IGBT junction-to-case
    • 0.7°C/W diode junction-to-case
    • 50°C/W diode junction-to-ambient

Schematic

Schematic - STMicroelectronics STGWA50IH65R 650V Soft-Switching IHR IGBT

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Publicado: 2026-05-08 | Actualizado: 2026-05-12