Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET
Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET is a TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance. Operating within a -55°C to +150°C junction temperature range, SiSD5300DN features a very low drain-source resistance and gate charge figure of merit (FOM). Applications include DC/DC converters, synchronous rectification, battery management, O-rings, and load switches.
Features
- TrenchFET Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Source flip technology enhances thermal performance
- 100 % Rg and UIS tested
- Single configuration
- PowerPAK® 1212-F package type
- Lead-free, Halogen-free, and RoHS compliant
Applications
- DC/DC converter
- Synchronous rectification
- Battery management
- O-ring and load switches
Specifications
- 30V maximum drain-source voltage
- +16V/-12V maximum gate-source voltage
- 500A maximum pulsed drain current
- 198A continuous drain current
- 87µΩ drain-source on-resistance
- 57W power dissipation
- 2V gate-source threshold voltage
- 27nC gate charge
- 90ns rise time
- 15ns fall time
- 38A maximum single pulse avalanche current
- 72mJ maximum single pulse avalanche energy
- -55°C to +150°C operating junction temperature range
Related Products
Vishay POWERPAK® 1212 MOSFETs
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ.
Publicado: 2024-02-23
| Actualizado: 2024-03-07