onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs
onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs are high-performance devices with exceptional characteristics. The onsemi NVHL075N065SC1 offers a typical RDS(on) of 57mΩ at a gate-source voltage (VGS) of 18V and 75mΩ at 15V. The device features ultra-low gate charge (QG(tot) = 61nC) and low output capacitance (Coss = 107pF), ensuring fast switching and reduced power losses.
Features
- Typ. RDS(on) = 57m @ VGS = 18V
- Typ. RDS(on) = 75m @ VGS = 15V
- Ultra-low gate charge (QG(tot) = 61nC)
- Low output capacitance (Coss = 107pF)
- 100% avalanche tested
- AEC-Q101 qualified and PPAP capable
- This device is Pb-free and is RoHS-compliant
Applications
- Automotive on-board charger
- Automotive DC/DC converter for EV/HEV
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Publicado: 2023-11-08
| Actualizado: 2024-06-18